| PART |
Description |
Maker |
| BAS40- Q62702-D339 BAS40 BAS40-04 BAS40-05 Q62702- |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MA2J728 MA728 |
Schottky Barrier Diodes (SBD)
Silicon Epitaxial Planar Type Schottky Barrier Diodes
From old datasheet system
|
Matsshita / Panasonic
Mitsubishi
|
| LMBD301LT1 |
Silicon Hot-Carrier Diodes Schottky Barrier Diodes
|
LRC[Leshan Radio Company]
|
| MBD301 MBD301-D MMBD301L MMBD301LT1 MMBD301LT3 |
Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes
|
ON Semiconductor
|
| LMBD301LT1G |
Silicon Hot-Carrier Diodes Schottky Barrier Diodes
|
Leshan Radio Company
|
| MA781 MA3S781 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
SILICON EPITAXIAL PLANAR TYPE
|
PANASONIC[Panasonic Semiconductor]
|
| MA727 MA3X727 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Silicon epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| 1PS66SB63 1PS79SB63 |
5 V, 20 mA low C_d Schottky barrier diodes
5 V, 20 mA low Cd Schottky barrier diodes SILICON, MIXER DIODE
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| DSSK28-006BS DSSK28-006B |
Silicon Schottky Diodes
From old datasheet system
Power Schottky Rectifier with common cathode 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| BAS52 BAS52-02V |
Silicon Schottky Diode
Schottky Diodes - Low current rectification and high speed switching Schottky diode
|
Infineon Technologies A...
Infineon Technologies AG
|
| Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S |
Silicon Carbide Schottky Diodes - 2x10A diode in TO263 package
Silicon Carbide Schottky Diodes - 2x10A diode in TO220-3 package
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| DSSK10-018A |
Silicon Schottky Diodes
Power Schottky Rectifier with common cathode
|
IXYS[IXYS Corporation]
|
